Feedback induced instabilities in a quantum dot semiconductor laser

Carroll, Ray and O'Driscoll, I. and Hegarty, S. P. and Huyet, G. and Houlihan, John and Viktorov, Evgeny A. and Mandel, P. (2006) Feedback induced instabilities in a quantum dot semiconductor laser. Optics Express, 14 (22). pp. 10831-10837.

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We analyse the properties of GaAs based quantum dot semiconductor lasers emitting near 1310 nm. The line-width enhancement factor is shown to depend strongly on device temperature, ranging from 1.5 at 20 degrees C to 5 at 50 degrees C. With optical feedback from a distant reflector, devices remained stable at 20 degrees C but displayed a range of instabilities at 50 degrees C, including irregular power drop - outs and periodic pulsations, before entering a chaotic regime. Such dynamical features are unique to quantum dot lasers - quantum well lasers are significantly more unstable under optical feedback making such a clear route to chaos difficult to observe. (c) 2006 Optical Society of America.

Item Type: Article
Additional Information: ISI Document Delivery No.: 109QV English Article 1094-4087
Uncontrolled Keywords: Linewidth enhancement factor optical feedback diodes sensitivity cavity gain
Departments or Groups:
Divisions: School of Science > Department of Computing, Maths and Physics
Depositing User: John Houlihan
Date Deposited: 14 Feb 2007 10:40
Last Modified: 22 Aug 2016 10:25

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