Vukkalam, Vinod and Houlihan, John (2010) Beam properties of injection profiled quantum dot lasers. Optics Communications, 283 (12). pp. 2596-2602. ISSN 0030-4018
Full text not available from this repository. (Request a copy)Abstract
The impact of injection current profiling on the spatial mode structure of quantum dot semiconductor lasers is investigated. Numerical simulations based on a spatial extension of a simple rate equation model for quantum dot devices reveal the role of non-resonant carries in the appearance of strong dips in the optical field of the device. Symmetry breaking may also occur whereby the position of the dip shifts from the centre of the injection region.
Item Type: | Article |
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Uncontrolled Keywords: | /dk/atira/pure/subjectarea/asjc/2500/2504 |
Departments or Groups: | |
Depositing User: | Admin SSL |
Date Deposited: | 19 Oct 2022 23:00 |
Last Modified: | 07 Jun 2023 18:40 |
URI: | http://repository-testing.wit.ie/id/eprint/3583 |
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