Gain and refractive index dynamics in p-doped InAs quantum dash semiconductor optical amplifiers

Komolibus, Katarzyna and Piwonski, Tomasz and Joshi, Siddharth and Chimot, Nicolas and Houlihan, John and Lelarge, Francois and Huyet, Guillaume (2016) Gain and refractive index dynamics in p-doped InAs quantum dash semiconductor optical amplifiers. Applied Physics Letters, 109 (3). ISSN 0003-6951

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Abstract

The ultrafast carrier dynamics in a p-doped dash-in-a-well structure at 1.5 μm is experimentally investigated. An analysis of the timescales related to carrier relaxation and escape processes as well as the "dynamical" linewidth enhancement factor is presented and compared with results obtained from similar un-doped materials. Intentional p-doping of the active region results in an enhancement of the intermediate timescale of the gain dynamics associated with phonon-assisted electron capture and a reduction of the α-factor due to increased differential gain.

Item Type:	Article
Additional Information:	Publisher Copyright: © 2016 Author(s).
Uncontrolled Keywords:	/dk/atira/pure/subjectarea/asjc/3100/3101
Departments or Groups:
Depositing User:	Admin SSL
Date Deposited:	19 Oct 2022 23:03
Last Modified:	07 Jun 2023 18:42
URI:	http://repository-testing.wit.ie/id/eprint/3785

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