Ultrafast dynamics of type-II GaSb/GaAs quantum dots

Komolibus, K. and Piwonski, T. and Gradkowski, K. and Reyner, C. J. and Liang, B. and Huyet, G. and Huffaker, D. L. and Houlihan, J. (2015) Ultrafast dynamics of type-II GaSb/GaAs quantum dots. Applied Physics Letters, 106 (3). ISSN 0003-6951

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Abstract

In this paper, room temperature two-colour pump-probe spectroscopy is employed to study ultrafast carrier dynamics in type-II GaSb/GaAs quantum dots. Our results demonstrate a strong dependency of carrier capture/escape processes on applied reverse bias voltage, probing wavelength and number of injected carriers. The extracted timescales as a function of both forward and reverse bias may provide important information for the design of efficient solar cells and quantum dot memories based on this material. The first few picoseconds of the dynamics reveal a complex behaviour with an interesting feature, which does not appear in devices based on type-I materials, and hence is linked to the unique carrier capture/escape processes possible in type-II structures.

Item Type:	Article
Additional Information:	Publisher Copyright: © 2015 AIP Publishing LLC.
Uncontrolled Keywords:	/dk/atira/pure/subjectarea/asjc/3100/3101
Departments or Groups:
Depositing User:	Admin SSL
Date Deposited:	19 Oct 2022 23:08
Last Modified:	26 Jun 2023 16:05
URI:	http://repository-testing.wit.ie/id/eprint/4291

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