O'Driscoll, I. and Piwonski, T. and Schleussner, C. F. and Houlihan, John and Huyet, G. and Manning, R. J. (2007) Electron and hole dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers. Applied Physics Letters, 91 (7). p. 3. ISSN 0003-6951
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Abstract
Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs/GaAs quantum dot amplifiers. The study reveals that hole recovery and intradot electron relaxation occur on a picosecond time scale, while the electron capture time is on the order of 10 ps. A longer time scale of hundreds of picoseconds is associated with carrier recovery in the wetting layer, similar to that observed in quantum well semiconductor amplifiers. (c) 2007 American Institute of Physics.
Item Type: | Article |
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Additional Information: | ISI Document Delivery No.: 201XT Times Cited: 28 Cited Reference Count: 13 O'Driscoll, I. Piwonski, T. Schleussner, C.-F. Houlihan, J. Huyet, G. Manning, R. J. AMER INST PHYSICS MELVILLE |
Departments or Groups: | Optics Research Group |
Divisions: | School of Science > Department of Computing, Maths and Physics |
Depositing User: | John Houlihan |
Date Deposited: | 19 Nov 2012 16:34 |
Last Modified: | 22 Aug 2016 10:26 |
URI: | http://repository-testing.wit.ie/id/eprint/1972 |
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